High density photodiodes

ABSTRACT

The present invention is a front-side contact, back-side illuminated (FSC-BSL) photodiode arrays and front-side illuminated, back-side contact (FSL-BSC) photodiode arrays having improved characteristics, including high production throughput, low-cost manufacturing via implementation of batch processing techniques; uniform, as well as high, photocurrent density owing to presence of a large continuous homogeneous, heavily doped layer; and back to front intrachip connections via the homogenous, heavily doped layers on the front and back sides of the substrate.

FIELD OF THE INVENTION

The present invention relates generally to the field of radiationdetectors, and in particular, relates to front-side contact, back-sideilluminated (FSC-BSL) photodiode arrays and front-side illuminated, backside contact (FSL-BSC) photodiode arrays having a plurality of heavilydoped n+ and p+ diffused regions and further comprisingthree-dimensional (3D)-microstructures, such as grooves, pits, andcavities for forming electrical connections. Still more particularly,the present invention relates generally to photodiode arrays that can bemanufactured with high-throughput and low cost and that are capable ofgenerating a uniform, high-density photocurrent.

BACKGROUND OF THE INVENTION

Photodiode arrays or photodiodes are used in an assortment ofapplications including, but not limited to, radiation detection, opticalposition encoding, and low light-level imaging, such as nightphotography, nuclear medical imaging, photon medical imaging,multi-slice computer tomography (CT) imaging, and ballistic photondetection etc. Typically, photodiode arrays may be formed as one- ortwo-dimensional arrays of aligned photodiodes, or, for optical shaftencoders, a circular or semicircular arrangement of diodes.

Conventional computed tomography (CT) scanners and digital radiographysystems use large numbers of X-ray detectors, on the order of severalhundred to several thousand, in which each X-ray detector includes ascintillator to convert X-rays into light and a photocell to convert thelight into an electrical signal. In such systems, it is preferred thatthe detectors are high density and that the detectors have equal pitch,i.e. the center-to-center distance from detector to detector is equal.Thus, the detectors are located as close as possible to one another,resulting in a detection system which has a high detection efficiency sothat a patient is exposed to only the minimum amount of X-rays requiredto produce a satisfactory image. As the devices become smaller, however,it becomes more difficult to provide efficient interconnections betweendevices, thus negating the benefits of the smaller device size.

One conventional method of achieving high-density integration ofphotodiode arrays is to fabricate devices by implementing a plurality oftechniques, including the creation of a pn-junction on one side of thesubstrate and subsequently routing the connection to the other side ofthe substrate via reactive ion etching (RIE). This results in theformation of dry etch holes, passivation of the walls of the dry etchholes with oxide, and development of a front-to-back connection, viaplacement of either a metal line or a doped polysilicon layer within theholes. This method, however, is not cost efficient and also results inlow throughput of the device.

In addition, the prior art is replete with attempts to design,fabricate, and implement high-density semiconductor arrays. For example,U.S. Pat. No. 5,501,990, assigned to Motorola, Inc. discloses, “a methodof fabricating a high density light emitting diode array withsemiconductor interconnects comprising the steps of: providing asubstrate of non-conductive material with a major surface, a conductivelayer of material on the major surface of the substrate, a first carrierconfinement layer on the conductive layer, an active layer on the firstcarrier confinement layer and a second carrier confinement layer on theactive layer; separating portions of the second carrier confinementlayer, the active layer and the first carrier confinement layer into aplurality of light emitting diodes positioned in rows and columns andseparating the conductive layer into a plurality of columns connecting afirst contact of each light emitting diode in a column to a firstcontact of each other light emitting diode in the column; forming columncontacts connected to the conductive layer at an end of each column; andforming a second contact on the cap layer of each light emitting diodeand connecting second contacts for each light emitting diode in a row tothe second contacts of all other light emitting diodes in the row.”

U.S. Pat. No. 5,656,508, also assigned to Motorola, Inc. discloses, “amethod of fabricating a two-dimensional organic light emitting diodearray for high density information image manifestation apparatuscomprising: providing an electrically insulative substrate with a planarsurface; depositing a layer of electrically conductive material on theplanar surface of the substrate; patterning the layer of electricallyconductive material to form a plurality of laterally spaced, conductivestrips defining first electrodes; depositing a layer of dielectricmedium on a surface of the conductive strips and the planar surface ofthe substrate; depositing a layer of photoresist on the layer ofdielectric medium; patterning the photoresist using a cavity definingmask to expose portions of the dielectric medium; etching away theexposed portions of the dielectric medium to form a plurality oflaterally spaced cavities, each of the plurality of cavities beingpositioned on an associated one of the defined first electrodes andexposing therein the associated first electrode; striping off thephotoresist; depositing in each of the cavities an electroluminescentmedium in the successive order of a layer of hole transporting material,a layer of active organic emitter, a layer of electron transportingmaterial and a layer of a low work functional metal; depositing a layerof ambient stable metal on the dielectric medium so as to sealinglyoverlie each of the cavities and electrically contact the layer of lowwork function metal in the cavities; and patterning the layer of ambientstable metal into metal strips in a direction orthogonal to theconductive strips so as to define second electrodes sealing each of theplurality of cavities.”

In addition high cost of manufacturing and low throughput, anothertypical problem with high-density integration of conventional photodiodearrays is the amount and extent of crosstalk that occurs betweenadjacent detector structures, primarily as a result of minority carriercurrent between diodes. The problem of crosstalk between diodes becomeseven more acute as the size of the photodiode arrays, the size ofindividual detectors comprising the arrays, the spatial resolution, andthe spacing of the photodiodes is reduced.

In certain applications, it is desirable to produce optical detectorshaving small lateral dimensions and spaced closely together. For examplein certain medical applications, it would beneficial to increase theoptical resolution of a detector array in order to permit for improvedimage scans, such as computer tomography scans. However, at conventionaldoping levels utilized for diode arrays of this type, the diffusionlength of minority carriers generated by photon interaction in thesemiconductor is in the range of at least many tens of microns, and suchminority carriers have the potential to affect signals at diodes awayfrom the region at which the minority carriers were generated.Therefore, the spatial resolution obtainable may be limited by diffusionof the carriers within the semiconductor itself, even if othercomponents of the optical system are optimized and scattered light isreduced.

Various approaches have been used to minimize crosstalk including, butnot limited to, providing inactive photodiodes to balance the leakagecurrent and using conventional two-dimensional or three-dimensionalstructures, such as trenches, moats, or insulating structures betweenphotodiodes or other active devices to provide isolation between thedevices.

For example, U.S. Pat. No. 4,904,861, assigned to Agilent Technologies,Inc., discloses “an optical encoder comprising: a plurality of activephotodiodes in an array on a semiconductor chip; a code member havingalternating areas for alternately illuminating and not illuminating theactive photodiodes in response to movement of the code member; meansconnected to the active photodiodes for measuring current from theactive photodiodes; and sufficient inactive photodiode area on thesemiconductor chip at each end of the array of active photodiodes tomake the leakage current to each end active photodiode of the arraysubstantially equal to the leakage current to an active photodioderemote from an end of the array”. Similarly, U.S. Pat. No. 4,998,013,also assigned to Agilent Technologies, Inc. discloses “means forshielding a photodiode from leakage current comprising: at least oneactive photodiode on a semiconductor chip; means for measuring currentfrom the active photodiode; a shielding area having a photodiodejunction substantially surrounding the active photodiode; and means forbiasing the shielding area photodiode junction with either zero bias orreverse bias.”

In addition to manufacturing cost, low throughput, and crosstalk, it isdifficult to achieve high density photodiode arrays with uniformity ofgenerated photocurrent and sufficient density of generated photocurrent.The photocurrent may be enhanced by internal gain caused by interactionamong ions and photons under the influence of applied fields, such asoccurs in an avalanche photodiode (APD). Elsewhere, passivation ofphotodetectors via sulfidization has repeatedly shown reduction ofsurface states, thereby reducing dark current density in sequenceincrementing photocurrent density.

As mentioned above, as photodiode detector devices become smaller, itbecomes more difficult to provide efficient interconnections betweendevices, thus putting an additional demand on device electricalrequirements. The prior art has attempted to manage interconnect densityby forming dense metal interconnect patterns, because high-density VLSIand ULSI devices typically require multiple levels of surfacemetallization in order to accommodate their complex wiring patterns.Multiple level metallization creates planarity problems in themetallization layers, however, thereby limiting interconnection density.Complex process steps are also needed to provide multiple levels ofmetallization.

For example, U.S. Pat. No. 5,276,955, assigned to Supercomputer SystemsLimited Partnership discloses “a method for forming a multilayersubstrate having high density area array interconnects, the methodcomprising the steps of: (a) providing three or more pre-assembledsubsections, each subsection comprising: a planar substrate having apair of generally planar exposed surfaces and being comprised of adielectric medium having a plurality of conductive layers disposedtherein, the conductive layers including: at least one power layer; andat least one X-Y signal pair layer; and a pad layer on at least one ofthe surfaces of the planar substrate, the pad layer comprising aplurality of metallic interconnect pads disposed on the surface of theplanar substrate such that an exposed surface of the interconnect padsis raised above the exposed surface of the dielectric medium surroundingthe interconnect pads, each of the interconnect pads being selectivelyconnected to one or more conductive regions in the signal pair layer orthe power layer; (b) stacking the three or more pre-assembledsubsections together such that the interconnect pads on the pad layer ofone subsection align with the interconnect pads on the pad layer of anadjacent subsection; and (c) electrically and mechanically joining thethree or more pre-assembled subsections in a simultaneous manner toconcurrently form the multilayer substrate by metallurgically bondingthe interconnect pads on adjacent subsections without bonding thesurrounding dielectric medium.”

Thus, conventional high-density photodiode array manufacturingtechniques are costly and have low throughput. More specifically,low-cost manufacturing and test techniques are not compatible withhigh-density photodiode array designs. Thus, there is a need for a highdensity photodiode array that can be manufactured at high-throughput andlow-cost and that is capable of producing uniform, high-densityphotocurrent. There is also a need for a high-density semiconductorcircuit and an economically, technically, and operationally feasiblefabrication method for a photodiode array capable of generating uniformas well as high-density photo current.

In addition, there is a need for a front-side illuminated, back-sidecontact (FSL-BSC) photodiode array having improved characteristics,including high production throughput, low-cost manufacturing viaimplementation of batch processing techniques; uniform as well as highphotocurrent density owing to the presence of a large continuoushomogeneous, heavily doped layer; and front to back intrachipconnections.

There is also a need for a front-side contact, back-side illuminated(FSC-BSL) photodiode array having improved characteristics, includinghigh production throughput, low-cost manufacturing via implementation ofbatch processing techniques; uniform as well as high photocurrentdensity owing to the presence of a large continuous homogeneous, heavilydoped layer; and back to front intrachip connections.

SUMMARY OF THE INVENTION

The present invention is directed towards detector structures, detectorarrays, and design and implementation of detector arrays for anassortment of applications including, but not limited to, computerizedtomography (CT) and non-CT applications. Specifically, the presentinvention is directed towards high-density photodiode arraysmanufactured at high-throughput and low-cost, capable of generatinguniform as well as high density photocurrent.

In one embodiment, the present invention is a photodiode, or an array ofphotodiodes, each of which comprises a substrate with at least a firstside and a second side; a first doped region of a first conductivitytype located proximate to the second side; a second doped region of saidfirst conductivity type located proximate to the second side; a void inthe substrate, wherein the void separates the first doped region and thesecond doped region, wherein the void extends substantially from thesecond side to the first side, wherein the void has sides, and whereinthe sides are inclined and meet at a point proximate to the first side;a third doped region of the first conductivity type proximate to atleast one of sides; and at least one doped region of a secondconductivity type proximate to the first side. The term proximate meansphysically layered or located at, or substantially close enough to beconsidered, from a functional standpoint, physically layered or locatedat a particular position, e.g. the back side or front side of thesubstrate.

Optionally, the photodiode further comprises at least one passivationlayer on the first side or the second side of the substrate. Thephotodiode comprises at least one anti-reflective layer on the firstside or the second side of the substrate and/or a plurality of contactelectrodes in electrical communication with each of the doped regions.The photodiode comprises a fourth doped region of the first conductivitytype proximate to one of the sides of the void. Optionally, thephotodiode comprises a doped region of a second conductivity typeproximate to the second side. The impurity of the first conductivitytype is p-type. The impurity of the second conductivity type is n-type.

In another embodiment, the present invention is a photodiode, or anarray of photodiodes, each of which comprises a substrate with at leasta front side and a back side; a first doped region of a firstconductivity type located proximate to the back side; a second dopedregion of the first conductivity type located proximate to the backside; a void in said substrate, wherein the void separates the firstdoped region and the second doped region and wherein the void extendssubstantially from the back side to said front side, wherein the voidhas sides; and a third doped region of the first conductivity typeproximate to at least one of sides. The photodiode comprises at leastone doped region of a second conductivity type proximate to said frontside or back side. The photodiode comprises at least one passivationlayer on the front side or the back side of the substrate. Thephotodiode comprises at least one anti-reflective layer on the frontside or the back side of the substrate and/or a plurality of contactelectrodes in electrical communication with each of the doped regions.The photodiode comprises a fourth doped region of the first conductivitytype proximate to one of the sides of the void. Optionally, the voidcomprises two inclined walls and a base, forming a V, and is doped withan impurity of a first conductivity type for electrically connecting thefront side of the substrate to the back side of the substrate. In oneembodiment, the first conductivity type is p-type and the secondconductivity type is n-type. In another embodiment, the firstconductivity type is n-type and the second conductivity type is p-type.

In another embodiment, the photodiodes of the present invention are madeby performing a mask oxidation on a front side and back side of a devicewafer; implementing n+ photolithography on the front and back sides;performing n+ diffusion followed by drive-in oxidation on the front andback sides; implementing a first p+ area photolithography on the frontside; performing p+ diffusion followed by drive-in oxidation on thefront side; growing a passivation layer on the front and back sides;implementing V-groove lithography on the back side; etching the V-grooveon the back side; removing the passivation layer from the front and backsides; implementing a second p+ area lithography on the back side;performing a p+ diffusion followed by drive-in oxidation on the backside; growing an anti-reflective (AR) layer on the front and back sides;implementing a contact window lithography on the front side; andperforming metal deposition followed by etching the metal on the frontside.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other features and advantages of the present invention will beappreciated, as they become better understood by reference to thefollowing detailed description when considered in connection with theaccompanying drawings, wherein:

FIG. 1 is a detailed cross-sectional illustration of one embodiment of ahigh density, front-side contact, back-side illuminated, (FSC-BSL)photodiode array of the present invention;

FIGS. 2 a-2 n illustrate one embodiment of the manufacturing steps ofthe high density, front-side contact, back-side illuminated, (FSC-BSL)photodiode array of the present invention;

FIG. 3 is a detailed cross-sectional illustration of one embodiment of ahigh density front-side illuminated, back-side contact (FSL-BSC)photodiode array of the present invention; and

FIGS. 3 a-3 n illustrate one embodiment of the manufacturing steps ofthe high density, front-side illuminated, back-side contact (FSL-BSC)photodiode array of the present invention.

DESCRIPTION OF THE INVENTION

The present invention is directed towards detector structures, detectorarrays, and design and implementation of detector arrays for anassortment of applications including, but not limited to, computerizedtomography (CT) and non-CT applications. Specifically, the presentinvention is directed towards high-density photodiode arraysmanufactured at high-throughput and low-cost, capable of generatinguniform as well as high density photocurrent.

More specifically, the present invention is directed towards afront-side contact, back-side illuminated (FSC-BSL) photodiode arrayhaving improved characteristics, including high production throughput,low-cost manufacturing via implementation of batch processingtechniques; uniform as well as high photocurrent density owing topresence of a large continuous homogeneous, heavily doped layer; andback to front intrachip connections via the homogenous, heavily dopedlayers on the front and back sides of the substrate.

In one embodiment, the photodiode array of the present invention isdesigned and fabricated at low-cost with high production throughput andhigh-density of integration capable of generating high-photocurrentdensity. The photodiode array comprises at least a plurality ofheterogeneous, heavily doped regions that 1) form front to back or backto front electrical connections and 2) facilitate generation ofhigh-density photocurrent. More particularly, the photodiode array ofthe present invention is capable of generating high-density photocurrentdue to a large area provided by the p+ diffusion regions.

Still more specifically, the photodiode array of the present inventioncomprises at least one heavily doped region, including, but not limitedto, n+ shallow diffused and p+ shallow diffused. In one embodiment, then+ and p+ shallow diffused regions facilitate formation of a front toback connection via linking the p+ shallow regions on both thefront-side and the back-side of the wafer. In another embodiment, the n+and p+ shallow diffused regions facilitate formation of a back to frontconnection via linking the p+ shallow regions on both the front-side andthe back-side of the wafer.

In one embodiment, the p+ shallow region has a larger area when comparedwith a conventional planar p+ diffused region and therefore is suitablefor applications where a high photocurrent density or highphotocurrent/unit area is desired from the photodiode.

In one embodiment, the photodiode array of the present invention ismanufactured using a diffusion process, wherein n+ shallow diffused andp+ shallow diffused regions are formed concurrently on the front andback sides of the substrate wafer, resulting in identical diffusiondepths in half the time. Thus, the cost of manufacturing issignificantly reduced via batch processing.

Reference will now be made to specific embodiments. Variousmodifications to the preferred embodiment will be readily apparent tothose of ordinary skill in the art, and the disclosure set forth hereinmay be applicable to other embodiments and applications withoutdeparting from the spirit and scope of the present invention and theclaims hereto appended. Thus, the present invention is not intended tobe limited to the embodiments described, but is to be accorded thebroadest scope consistent with the disclosure set forth herein.

FIG. 1 is a detailed illustration of one embodiment of high density,front side contact, back side illuminated, (FSC-BSL) photodiode 100 ofthe present invention. Single-crystal semiconductor substrate or devicewafer 101 comprises at least one photodiode. Device wafer 101 may bemade up of various materials, such as, but not limited to, Si or Ge. Inone embodiment, the crystal orientation of device wafer 101 ispreferably <1-0-0>. The resistivity of wafer 101 is preferably 1000Ohm-cm (Ωcm). Both the front and backside of wafer 101 are selectivelyetched, at appropriate positions via suitable etching techniques to formshallow diffused regions wherein the shallow diffused regions 1) formfront to back connections and 2) facilitate generation of high-densityphotocurrent.

The FSC-BSL photodiode array may be fabricated using a plurality ofetching and diffusion processes. In one embodiment, the photodiode arrayof the present invention is fabricated using an appropriate low thermalbudget diffusion process, comprising at least one diffusion and/ordrive-in step. In a second embodiment, the diffusion and/or drive-in isperformed on both the front-side and back-side simultaneously to achieveidentical diffusion depths with greater efficiency. In a thirdembodiment, the diffusion is performed in half the traditional time andthus results in reduced manufacturing cost. At least one, but preferablya plurality of heterogeneous, heavily doped regions, such as n+ and p+type doped regions, are obtained as a result of this low cost, lowthermal budget diffusion process. In a yet another embodiment, thephotodiode array of the present invention is fabricated using anappropriate V-groove etching technique and subsequent doping, such asdiffusion or ion implant, of the walls of the groove to connect the p+diffused region from one side to the other side of the wafer therebyfacilitating development of a front to back connection. Owing to thefact that V-groove etching can be done with a liquid such as KOH, thisstep can be done in a batch process resulting in much higher productionthroughput and lower cost. The FSC-BSL photodiode array of the presentinvention has a larger p+ diffused region when compared with aconventional planar p+ diffused region and therefore is suitable forapplications where a high photocurrent density or high photocurrent/unitarea is desired from the photodiode.

In one embodiment, at least a portion of substrate wafer 101 comprises afront side 102 and a back side 103, wherein the substrate waferpossesses appropriate specifications in agreement with the principles ofthe present invention. It should be understood by those of ordinaryskill in the art that the above specifications are not limited to thoserecommended herein and that these specifications can be easily changedto suit varying design, fabrication, and functional requirementssuggested herein.

In one embodiment, the substrate wafer 101 comprises a first pluralityof heavily doped regions. Preferably, first heavily doped regions, suchas left region 104 and right region 105 on front side 102 and left 106and right 107 regions on back side 103 are doped with similar impuritiesof analogous conductivity types, such as either p-type or n-type. In oneembodiment, the substrate wafer 101 comprises a second plurality ofheavily doped regions left region 108, right region 109, center region110, inclined regions 111, and 112, doped with similar impurities ofanalogous conductivity types, such as either p-type or n-type.

In one embodiment, if the first plurality of heavily doped regions 104,105, 106, and 107 are doped with a suitable impurity of a firstconductivity type wherein the first conductivity type is n-type, then asecond plurality of heavily doped regions 108, 109, 110, 111, and 112are doped with a suitable impurity of a second conductivity, wherein thesecond conductivity type is p-type. Boron and phosphorus (P) are thepreferred p- and n-type dopants employed to create the p+ and n+regions. It should be understood to those of ordinary skill in the artthat any suitable doping material may be used.

In one embodiment, regions 108, 109, and 110 may possess the followingposition and orientation specifications: regions 108, 109, and 110 areparallel to both front side 102 and back side 103 of wafer 101. Regions108 and 109 are proximate to back side 103 whereas region 110 isproximate to front side 102. In addition, regions 111 and 112 possessthe following position and orientation specifications in one embodiment:orientation inclined with respect to both front side 102 and back side103 of wafer 101. Optionally, 110, 111, and 112 respectively, comprisethe base and walls, respectively, of a V-groove etched onto backside 102of wafer 101, discussed in greater detail below.

In one embodiment, the FSC-BSL photodiode array of the present inventionis designed and fabricated at low-cost with high production throughputand high-density of integration capable of generating high-photocurrentdensity. The photodiode array comprises at least a plurality ofheterogeneous, heavily doped regions that 1) form front to backconnections and 2) facilitate generation of high-density photocurrent.More particularly, the photodiode array of the present invention iscapable of generating high-density photocurrent due to a large areaprovided by the p+ diffusion regions. It should be noted that althoughone exemplary manufacturing process is described herein, variousmodifications may be made without departing from the spirit and scope ofthe invention.

FIGS. 2 a-2 n illustrate one embodiment of the manufacturing steps ofthe high density, front side contact, back side illuminated, (FSC-BSL)photodiode array of the present invention. The manufacturing stepsdescribed herein provide one manufacturing example of the photodiodearray of the present invention. Modifications or alterations to themanufacturing steps, their corresponding details, and any orderpresented may be readily apparent to those of ordinary skill in the art.Thus, the present invention contemplates many possibilities formanufacturing the photodiode array of the present invention and is notlimited to the examples provided herein.

Referring now to FIG. 2 a, the starting material of the photodiode arrayof the present invention is device or substrate wafer 201 a. Devicewafer 201 a is preferably Si, of n-type conductivity, a crystalorientation of <1-0-0> and a resistivity as high as 1000 Ohm cm (Ωcm).In addition, device wafer 201 a is polished on both sides to allow forgreater conformity to parameters, surface flatness, and thicknessspecifications. It should be understood by those of ordinary skill inthe art, however, that the above specifications are not binding and thatthe type of material and wafer size, resistivity, and conductivity canbe easily changed to suit the design, fabrication, and functionalrequirements of the present invention.

In step 220, device wafer 201 a is subjected to standard mask oxidationprocess that grows a mask oxide layer 221 a and 222 a on the front-sideand on the back-side of the device wafer, respectively. In oneembodiment, the oxidation mask is made of SiO₂ or Si₃N₄ and thermaloxidation is employed to achieve mask oxidation. Standard mask oxidationis well known to those of ordinary skill in the art and will not bedescribed in further detail herein.

As shown in FIG. 2 b, after the standard mask oxidation is complete instep 220, the device wafer is subjected to n+ photolithography on boththe front-side and back-side of device wafer 201 b in step 225.Photolithography includes employing a photoresist layer to etch aspecific pattern on the surface of the wafer. Generally, the photoresistlayer is a photosensitive polymeric material for photolithography andphotoengraving that can form a patterned coating on a surface. Afterselecting a suitable material and creating a suitable photoresistpattern, a thin photoresist layer is applied to both the front side andback side of device wafer 201 b. In one embodiment, photoresist layer isapplied via a spin coating technique. Spin coating is well-known tothose of ordinary skill in the art and will not be described in detailherein. The photoresist layer is then appropriately treated to reveal n+diffusion regions.

In an optional step, the device wafer is subjected to n+ masking. N+masking is employed to protect portions of device wafer 201 b.Generally, photographic masks are high precision plates containingmicroscopic images of preferred pattern or electronic circuits. They aretypically fabricated from flat pieces of quartz or glass with a layer ofchrome on one side. The mask geometry is etched in the chrome layer. Inone embodiment, the n+ mask comprises a plurality of diffusion windowswith appropriate geometrical and dimensional specifications. Thephotoresist coated device wafer 201 b is aligned with the n+ mask. Anintense light, such as UV light, is projected through the mask, exposingthe photoresist layer in the pattern of the n+ mask. The n+ mask allowsselective irradiation of the photoresist on the device wafer. Regionsthat are exposed to radiation are hardened while those that are reservedfor diffusion remain shielded by the n+ mask and easily removed. Theexposed and remaining photoresist is then subjected to a suitablechemical or plasma etching process to reveal the pattern transfer fromthe mask to the photoresist layer. An etching process is then employedto remove the silicon dioxide layer. In one embodiment, the pattern ofthe photoresist layer and/or n+ mask defines at least one region 202 bdevoid of the oxide layer deposited in step 220 and ready for n+diffusion. In one embodiment, the pattern of the photoresist layerand/or n+ mask defines four regions 202, 203, 204, and 205, which aredevoid of the oxide layer and ready for n+ diffusion.

Now referring to FIG. 2 c, in step 230, device wafer 201 c is subjectedto n+ diffusion followed by drive-in oxidation after the n+ masking andetching step. Generally, diffusion facilitates propagation of adiffusing material through a host material. In a semiconductor waferfabrication process, diffusion is employed to convert exposed portionsof an n-type silicon wafer into a p-type silicon, or vice versa. In step230, an appropriate amount of dopant atoms is deposited onto thesubstrate wafer and fills the gaps left by the removed photoresistlayer. Then, the wafer is subjected to a drive-in oxidation process thatis used to redistribute the dopant atoms and deposit them deeper intothe wafer. In addition, exposed silicon surfaces are oxidized.

In one embodiment, the simultaneous front and backside diffusioninvolves using a suitable dopant of n-type conductivity. In oneembodiment, simultaneous front-side and back-side diffusion on devicewafer 201 c may be achieved by using a liquid dopant source and rapidthermal processing (RTP). U.S. Pat. No. 5,928,438 is assigned to Salami,Jalal et al and teaches rapid thermal processing and is hereinincorporated by reference. In one embodiment, phosphorus is used asdopant. Many approaches to the diffusion process are well-known to thoseof ordinary skill in the art and will not be discussed in detail herein.It should be noted, however, that the choice of diffusion method isdependent on many factors, including but not limited to the diffusioncoefficient of the dopant, permissible error in the diffusion depth, andthe diffusion source.

The resultant n+ diffusion regions are then subjected to, in step 235,high temperature drive-in oxidation, thus driving the dopant deeper intowafer 201 c. Nuisance effects, which transpire when superfluous drive-insteps occur as an artifact of the overall process, tend to be a keyproblem in drive-in diffusion. More specifically, nuisance effects arecompounded during each subsequent high temperature drive-in step, whichcauses further diffusion of the dopant into the substrate. Accounting ofsubsequent alterations during each high temperature drive-in stepinvolved in the overall process is known as thermal budgeting. Thus, thethermal budget of an overall process is dependent on the number ofsteps.

In one embodiment, the low thermal budget diffusion process used tomanufacture the FSC-BSL photodiode of the present invention comprisestwo steps: a first deposition/diffusion step, and a second drive-inoxidation step. The two-step example provided above is by way of exampleonly and no way limiting to the present invention. It should beunderstood by those of ordinary skill in the art that any number ofsteps may be performed, keeping in mind overall cost efficiency andthermal budget of the device.

Referring now to FIG. 2 d, in step 240, the front side of the devicewafer 201 d undergoes a first p+ area photolithography process, creatingregion 206 d. As with any conventional photolithographic process, p+photolithography comprises at least the following tasks, but is notlimited to such tasks: substrate preparation; photoresist application;soft baking; mask alignment; exposure; development; hard baking; andetching. In addition, various other chemical treatments may beperformed. In one embodiment, the pattern of the photoresist layerand/or p+ mask defines one region 206 d, which is devoid of the oxidelayer and ready for p+ diffusion.

As shown in FIG. 2 e, region 206 e is subject to p+ masking anddiffusion in step 245. The p+ masking and diffusion process is similarto that delineated with respect to the n+ masking process describedabove and will not be repeated in detail herein. The p+ masking processof step 245 further comprises deposition and drive-in oxidation,allowing for predefined and/or predetermined thermal budget in accordwith the principles of the present invention. In one embodiment, the p+dopant is boron.

In step 250, shown in FIG. 2 f, an insulation layer 251 of a suitablematerial is deposited on the front-side and the back-side of the devicevia suitable oxidation or nitridation techniques. By way of example, andby no means limiting, the insulation layer grown herein may utilize thinfilm materials, such as oxides, sulfides, fluorides, nitrides,selenides, and metals, among others. In one embodiment of the presentinvention, the insulation layer comprises silicon nitride Si₃N₄. In oneembodiment, the Si₃N₄ layer is uniformly grown over both the front-sideand the back-side of the wafer via employment of suitable chemical vapordeposition techniques. In one embodiment, the Si₃N₄ layer is grown suchthat it is transparent to UV light that facilitates UV treatment of thewafer during future photolithographic processes, if any. Generally,Si₃N₄ commonly used in silicon integrated circuit manufacturing is adielectric material serving several purposes, such as a passivationlayer or as a mask (barrier or insulation) against oxidation of the ARlayer. Preferably, the Si₃N₄ has energy gap ˜5 eV and density ˜3.0g/cm³.

Referring now to FIG. 2 g, the back side of device wafer 201 g issubjected to V-groove lithography in step 255 at region 207 g. Akin toconventional photolithographic process, V-groove photolithographycomprises a plurality of routine tasks including, but not restricted to,substrate preparation, photoresist application, soft baking, maskalignment, exposure, developing, hard baking, etching, etc. respectivelyand various other chemical treatments (thinning agents, edge-beadremoval etc.) in repeated steps on wafer 201 g. It should be noted thatin step 255, only the back side of the device wafer 201 g is subjectedto V-groove photolithography process.

V-groove masking is employed to protect portions of the device wafer 201g. The V-groove masking process is similar to that delineated withrespect to the n+ and p+ masking processes, except for the fact thatV-groove masking involves design and implementation of a customizedV-groove mask, in accord with the principles of the present inventionand will not be detailed herein. The V-groove photographic mask employedherein facilitates protection of certain regions confined to the backside of wafer 201 g during V-groove etching and subsequent strippingprocess discussed later. In one embodiment, the V-groove mask comprisesa plurality of V-groove windows with appropriate geometrical anddimensional specifications in accord with the present invention. Forinstance, V-groove mask employed in compliance with the presentinvention comprises a single V-groove window. In one embodiment, thepattern of the V-groove mask defines at least one region 207 g devoid ofthe insulation and the oxide layer deposited in steps 250 and 220,respectively.

Now referring to FIG. 2 h, region 207 h is subject to a V-groove etchingprocess in step 260. In one embodiment, region 207 h, confined to backside of wafer 201 h, may be selectively etched via a suitable V-grooveetching technique utilizing the V-groove mask of the present inventionto form a single V-groove therein. In one embodiment, orientationselective wet etching techniques are employed, including, but notlimited to, isotropic and anisotropic etching. Via a wet etch technique,mono-crystalline wafers etch faster in certain crystallographicdirections than in others, thereby allowing for certain layers orportions of the wafer to act as a “stop” for the etch process. Thisinvolves both selection of an appropriate wafer orientation and asuitable etchant. It must be noted here that the etch rate of silicon isorientation dependent.

In one embodiment, V-groove etching can be performed with a liquidanisotropic etchant, such as KOH; thus step 260 is implemented herein asa batch process resulting in much higher production throughput and lowercost. It should be noted here that if the etchant is KOH, the<1-0-0>-planes of the wafer are relatively slowly etched. It must alsobe noted that the more slowly etched crystal planes form the side andend walls of the V-groove. For example, if IPA is added to KOH,<1-1-0>-planes etch slower than <1-0-0>-planes, resulting in V-grooveswith a 45° angle to the surface. In one embodiment, reactive ion etching(RIE) may be used to form concave grooves on the backside of devicewafer 201 h. The grooves formed via this technique, however, are“U”-shaped. The sidewalls of such grooves are more vertical, wherein thewall is angled at less than 10 degrees.

In one embodiment, the V-shaped groove, at region 207 h, etched parallelto the <1-1-0> direction has planar facets, which bind the V-shapedgroove, lying in the <1-1-1> plane. Further, it must be noted here thatany mask opening in a <1-0-0>-wafer will turn into a square etch pitwith four inclined <1-1-1>-walls or planes if etched long enough inwhich the <1-1-1>-planar facets are inclined at an angle of 54.7° withrespect to the <1-0-0> plane. In one embodiment, a if square maskopening is rotated 45° relative to the wafer 201 h flat, the<1-0-0>-planes, vertical to the surface, are revealed. In oneembodiment, anisotropic etching is preferably performed, which virtuallystops at the <1-1-1>-planes, thus a square mask opening etched longenough produces a pyramidal pit. If the square is stretched to a longthin line, the etch pit will turn into a long groove with a V-shapedcross-section. This so-called V-groove can be used for several purposes;such as but not limited to, positioning of optical fibers, providingchannels for distribution of fluids, etc. Dimensions of the groove arecontrolled by the corresponding V-groove mask windows, the accuracy oftheir alignment with the crystal axes, the erosion rate of the edges ofthe mask, and the relative etch rates of the crystal planes. Typically,the finished widths of V-grooves can be controlled to within 0.5 to 1μm. The scope and spirit of the invention is no way limited, and other3-D microstructures of varying shapes and dimensions including, but notlimited to, grooves, pyramidal pits, pyramidal cavities etc. may beetched into the wafer in accordance to the properties of the presentinvention. Such various other microstructures will be readily apparentto one of ordinary skill in the art having the benefit of thisdisclosure. The above specifications are not limiting with respect tothe 3-D microstructures and their accompanying dimensions as they can bechanged to suit any design, fabrication, and functional requirements.

In step 265, as shown in FIG. 2 i, the silicon nitride passivation 251layer formed on both the front side and back side of the wafer in step250, and shown in FIG. 2 f, is removed. Stripping of the passivationlayer is routine action of engineering and is readily known to those ofordinary skill in the art and will not be discussed in further detailherein.

As shown in FIG. 2 j, the back side of device wafer 201 j is subjectedto a second p+ lithography process in step 270. In one embodiment, asubstantial portion 208 j of the wafer 201 j comprising the V-groove andconfined to the backside, excluding the n+ diffused regions 204 j and205 j, is defined using p+ photolithography. It must be noted here thatthe second p+ lithography process is analogous to the first p+ arealithography process except that in second p+ lithography backside ofwafer 201 j is processed. Thus, details of the p+ lithography processedwill not be discussed herein as they have already been described above.

In step 275, as shown in FIG. 2 k, portion 208 k is subject to p+masking and diffusion. The p+ masking and diffusion process is similarto that delineated with respect to the n+ masking process describedabove and will not be repeated in detail herein. The p+ masking processof step 275 further comprises deposition and drive-in oxidation,allowing for predefined and/or predetermined thermal budget in accordwith the principles of the present invention. In one embodiment, the p+dopant is boron.

Now referring to FIG. 21, an anti-reflective (AR) layer is grown on thefront-side and back-side of the device via thermal oxidation in step280. Various anti-reflective coating designs, such as 1 layer, 2 layer,3 layer, and 4+ layers may be employed. By way of example, and by nomeans limiting, the 1 layer anti-reflective coating design adoptedherein utilizes thin film materials, such as oxides, sulfides,fluorides, nitrides, selenides, metals, among others. In one embodimentof the present invention, the anti-reflective layer comprises SiO₂ (i.e.silicon dioxide antireflective). Preferably, the SiO₂ has a thickness of900 Å.

As shown in FIG. 2 m, in step 285, a contact etch mask is used to etch acontact window onto the front side of the wafer. The contact window isformed on the front side of the treated substrate wafer by usingstandard semiconductor technology photolithography techniques. Thecontact window oxide can then be removed by either standard wet orstandard dry etching techniques as are well known to those of ordinaryskill in the art.

More specifically, and not limited to such example, in one embodiment ofthe photodiode array of the present invention, a contact window mask isfirst applied, followed by etching with a contact window oxide onselected regions of the front side of device wafer 201 m. Contactlithography, well-known to those of ordinary skill in the art, involvesprinting an image or pattern via illumination of a photomask in directcontact with a substrate coated with an imaging photoresist layer.

In one embodiment, a plurality of contact windows 211 m are formed onthe front side of the device wafer 201 m, using the contact window mask.Typically, a contact window is an aperture defined in a surfacepassivation layer through which device metallization develops contactwith circuit elements. In one embodiment, the contact window mask is adark field mask, which is used to remove the silicon oxide layer in bothn-type and p-type regions requiring contacts. While contact masks haveconventionally been fairly large (on the order of 100 mm or higher), itis possible that alignment tolerances may necessitate smaller mask sizesto allow stepping between exposures. As in nano-imprint lithography, themask needs to have roughly the same feature size as the desire image.

Using the contact mask, at least one or a plurality of contact windows211 m are opened through the protective oxide layer deposited on thesurface of device wafer 201 m. In one embodiment, contact window etchingis achieved via a chemical etching process, wherein the wafer isimmersed in a buffered oxide etch (BOE), a HF acid-based solution forintervals sufficient enough to remove the layers exposed by the contactwindow mask.

Referring now to FIG. 2 n, the device wafer 201 n is subjected to ametal deposition process 290 to etch metal on the front side of thewafer for creating electrical connections to n+ and p+ diffused regions.In the metal deposition process, also called metallization, metal layersare deposited on the wafer to create conductive pathways. The mostcommon metals include aluminum, nickel, chromium, gold, germanium,copper, silver, titanium, tungsten, platinum, and tantalum. Selectedmetal alloys may also be used. Metallization is often accomplished witha vacuum deposition technique. The most common deposition processesinclude filament evaporation, electron-beam evaporation, flashevaporation, induced evaporation, and sputtering, followed by metalmasking and etching. Metal etching can be performed in a variety ofmethods, including, but not limited to abrasive etching, dry etching,electroetching, laser etching, photo etching, reactive ion etching,sputter etching, and vapor phase etching. In one embodiment, metaldeposition lithography comprises initial performance of metal depositionfollowed by etching metal on front side of wafer 201 n facilitatingdevelopment of connection to regions 212 n.

As mentioned above, the present invention is also directed towards afront-side illuminated, back-side contact (FSL-BSC) photodiode arrayhaving improved characteristics, including high production throughput,low-cost manufacturing via implementation of batch processingtechniques; uniform and high photocurrent density due to the presence ofa large continuous homogeneous, heavily doped layer; and front to backintrachip connections via the homogenous, heavily doped layers on thefront and back sides of the substrate. In one embodiment, the FSL-BSCphotodiode array of the present invention comprises at least a pluralityof front side illuminated photodiodes, optionally organized in the formof an array, with both anode and cathode contacts confined to thebackside. In one embodiment, the FSL-BSC photodiode array furthercomprises a continuous p+ diffusion region that facilitates thegeneration of a uniform photocurrent.

Referring now to FIG. 3, a detailed cross-sectional illustration of oneembodiment of a high density front-side illuminated, back-side contact(FSL-BSC) photodiode array of the present invention is shown. In oneembodiment, the FSL-BSC photodiode array 300 of the present inventioncomprises device wafer 301 and a plurality of heterogeneously heavilydoped regions. In one embodiment, the FSL-BSC photodiode array 300further comprises n+ heavily doped regions 302, 303, 304, and 305 and p+heavily doped regions 306, 307, 308, 309, and 310. The FSL-BSCphotodiode array of the present invention further comprises heavilydoped n+ metal contacts 311 and 312, and heavily doped p+ metal contacts313 and 314, positioned on the backside 319 of substrate wafer 301.FSL-BSC 300 further comprises at least one V-groove 315 on the backside319 of wafer 301. In addition, FSL-BSC 300 comprises anti-reflective(AR) layer 316 on both the frontside 318 and backside 319 of devicewafer 301.

The manufacturing process of the FSL-BSC photodiode array of the presentinvention will now be described in greater detail. In one embodiment,the FSL-BSC photodiode array of the present invention is designed andfabricated at low-cost with high production throughput and high-densityof integration capable of generating uniform as well ashigh-photocurrent density. The FSL-BSC photodiode array comprises atleast a plurality of heterogeneous, heavily doped regions that 1) formfront to back connections and 2) facilitate generation of uniformphotocurrent. More particularly, the photodiode array of the presentinvention is capable of generating uniform photocurrent due to thepresence of continuous p+ diffusion regions.

Now referring to FIGS. 3 a-3 n, the manufacturing steps of oneembodiment of the high density, front-side illuminated, back-sidecontact (FSL-BSC) photodiode array of the present invention aredescribed. The manufacturing steps delineated herein provide onemanufacturing example of the photodiode array of the present invention.Modifications or alterations to the manufacturing steps, theircorresponding details, and any order presented may be readily apparentto those of ordinary skill in the art. Thus, the present inventioncontemplates many possibilities for manufacturing the photodiode arrayof the present invention and is not limited to the examples providedherein.

Referring now to FIG. 3 a, the starting material of the photodiode arrayof the present invention is device or substrate wafer 301 a. Devicewafer 301 a is preferably Si, of n-type conductivity, a crystalorientation of <1-0-0> and a resistivity as high as 1000 Ohm cm (Ωcm).In addition, device wafer 301 is polished on both sides to allow forgreater conformity to parameters, surface flatness, and thicknessspecifications. It should be understood by those of ordinary skill inthe art, however, that the above specifications are not binding and thatthe type of material and wafer size, resistivity, and conductivity canbe easily changed to suit the design, fabrication, and functionalrequirements of the present invention.

In step 320, device wafer 301 a is subjected to standard mask oxidationprocess that grows a mask oxide layer 321 a and 322 a on the front-sideand on the back-side of the device wafer, respectively. In oneembodiment, the oxidation mask is made of SiO₂ or Si₃N₄ and thermaloxidation is employed to achieve mask oxidation. Standard mask oxidationis well known to those of ordinary skill in the art and will not bedescribed in further detail herein.

As shown in FIG. 3 b, after the standard mask oxidation is complete instep 320, the device wafer is subjected to n+ photolithography on boththe front-side 318 and back-side 319 of device wafer 301 b in step 325.Photolithography includes employing a photoresist layer to etch aspecific pattern on the surface of the wafer. Generally, the photoresistlayer is a photosensitive polymeric material for photolithography andphotoengraving that can form a patterned coating on a surface. Afterselecting a suitable material and creating a suitable photoresistpattern, a thin photoresist layer is applied to both the front side andback side of device wafer 301 b. In one embodiment, photoresist layer isapplied via a spin coating technique. Spin coating is well-known tothose of ordinary skill in the art and will not be described in detailherein. The photoresist layer is then appropriately treated to reveal n+diffusion regions.

In an optional step, the device wafer is subjected to n+ masking. N+masking is employed to protect portions of device wafer 301 b.Generally, photographic masks are high precision plates containingmicroscopic images of preferred pattern or electronic circuits. They aretypically fabricated from flat pieces of quartz or glass with a layer ofchrome on one side. The mask geometry is etched in the chrome layer. Inone embodiment, the n+ mask comprises a plurality of diffusion windowswith appropriate geometrical and dimensional specifications. Thephotoresist coated device wafer 301 b is aligned with the n+ mask. Anintense light, such as UV light, is projected through the mask, exposingthe photoresist layer in the pattern of the n+ mask. The n+ mask allowsselective irradiation of the photoresist on the device wafer. Regionsthat are exposed to radiation are hardened while those that are reservedfor diffusion remain shielded by the n+ mask and easily removed. Theexposed and remaining photoresist is then subjected to a suitablechemical or plasma etching process to reveal the pattern transfer fromthe mask to the photoresist layer. An etching process is then employedto remove the silicon dioxide layer. In one embodiment, the pattern ofthe photoresist layer and/or n+ mask defines at least one region devoidof the oxide layer deposited in step 320 and ready for n+ diffusion. Inone embodiment, and as shown in FIG. 3 b, the pattern of the photoresistlayer and/or n+ mask defines four regions 323 b, which are devoid of theoxide layer and ready for n+ diffusion.

Now referring to FIG. 3 c, in step 330, device wafer 301 c is subjectedto n+ diffusion followed by drive-in oxidation after the n+ masking andetching step at regions 302 c, 303 c, 304, and 305 c. Generally,diffusion facilitates propagation of a diffusing material through a hostmaterial. In a semiconductor wafer fabrication process, diffusion isemployed to convert exposed portions of an n-type silicon wafer into ap-type silicon, or vice versa. In step 330, an appropriate amount ofdopant atoms is deposited onto the substrate wafer and fills the gapsleft by the removed photoresist layer. Then, the wafer is subjected to adrive-in oxidation process that is used to redistribute the dopant atomsand deposit them deeper into the wafer. In addition, exposed siliconsurfaces are oxidized. As described above, in one embodiment, thesimultaneous front and backside diffusion involves using a suitabledopant of n-type conductivity. In one embodiment, simultaneousfront-side and back-side diffusion on device wafer 301 c may be achievedby using a liquid dopant source and rapid thermal processing (RTP), alsoas described above and not repeated herein.

The resultant n+ diffusion regions are then subjected to, in step 335,high temperature drive-in oxidation, thus driving the dopant deeper intowafer 301 c, as described in detail above. In one embodiment, the lowthermal budget diffusion process used to manufacture the FSL-BSCphotodiode of the present invention comprises two steps: a firstdeposition/diffusion step, and a second drive-in oxidation step. Thetwo-step example provided above is by way of example only and no waylimiting to the present invention. It should be understood by those ofordinary skill in the art that any number of steps may be performed,keeping in mind overall cost efficiency and thermal budget of thedevice.

Referring now to FIG. 3 d, in step 340, both the front side and backside of device wafer 301 d undergoes a first p+ area photolithographyprocess, creating regions 306 d, 307 d, and 308 d. As with anyconventional photolithographic process, p+ photolithography comprises atleast the following tasks, but is not limited to such tasks: substratepreparation; photoresist application; soft baking; mask alignment;exposure; development; hard baking; and etching. In addition, variousother chemical treatments may be performed. In one embodiment, thepattern of the photoresist layer and/or p+ mask defines regions 306 d,307 d, and 308 d.

As shown in FIG. 3 e, regions 306 e, 307 e, and 308 e are subject to p+masking and diffusion in step 345. The p+ masking and diffusion processis similar to that delineated with respect to the n+ masking processdescribed above and will not be repeated in detail herein. The p+masking process of step 345 further comprises deposition and drive-inoxidation, allowing for predefined and/or predetermined thermal budgetin accord with the principles of the present invention. In oneembodiment, the p+ dopant is boron.

In step 350, shown in FIG. 3 f, an insulation layer 351 of a suitablematerial is deposited on the front-side and the back-side of the devicevia suitable oxidation or nitridation techniques. By way of example, andby no means limiting, the insulation layer grown herein may utilize thinfilm materials, such as oxides, sulfides, fluorides, nitrides,selenides, and metals, among others. In one embodiment of the presentinvention, the insulation layer comprises silicon nitride Si₃N₄. In oneembodiment, the Si₃N₄ layer is uniformly grown over both the front-sideand the back-side of the wafer via employment of suitable chemical vapordeposition techniques. In one embodiment, the Si₃N₄ layer is grown suchthat it is transparent to UV light that facilitates UV treatment of thewafer during future photolithographic processes, if any. Generally,Si₃N₄ commonly used in silicon integrated circuit manufacturing is adielectric material serving several purposes, such as a passivationlayer or as a mask (barrier or insulation) against oxidation of the ARlayer. Preferably, the Si₃N₄ has energy gap 5 eV and density 3.0 g/cm³.

Referring now to FIG. 3 g, the back side of device wafer 301 g issubjected to V-groove lithography in step 355 at region 309 g. Akin toconventional photolithographic process, V-groove photolithographycomprises a plurality of routine tasks including, but not restricted to,substrate preparation, photoresist application, soft baking, maskalignment, exposure, developing, hard baking, etching, etc. respectivelyand various other chemical treatments (thinning agents, edge-beadremoval etc.) in repeated steps on wafer 301 g. It should be noted thatin step 355, only the back side of the device wafer 301 g is subjectedto V-groove photolithography process.

V-groove masking is employed to protect portions of the device wafer 301g. The V-groove masking process is similar to that delineated withrespect to the n+ and p+ masking processes, except for the fact thatV-groove masking involves design and implementation of a customizedV-groove mask, in accord with the principles of the present inventionand will not be detailed herein. The V-groove photographic mask employedherein facilitates protection of certain regions confined to the backside of wafer 301 g during V-groove etching and subsequent strippingprocess discussed later. In one embodiment, the V-groove mask comprisesa plurality of V-groove windows with appropriate geometrical anddimensional specifications in accord with the present invention. Forinstance, V-groove mask employed in compliance with the presentinvention comprises a single V-groove window. In one embodiment, thepattern of the V-groove mask defines at least one region 309 g devoid ofthe insulation and the oxide layer deposited in steps 350 and 320,respectively.

Now referring to FIG. 3 h, region 309 h is subject to a V-groove etchingprocess in step 360. In one embodiment, region 309 h, confined to backside of wafer 301 h, may be selectively etched via a suitable V-grooveetching technique utilizing the V-groove mask of the present inventionto form a single V-groove therein. In one embodiment, orientationselective wet etching techniques are employed, including, but notlimited to, isotropic and anisotropic etching. Via a wet etch technique,mono-crystalline wafers etch faster in certain crystallographicdirections than in others, thereby allowing for certain layers orportions of the wafer to act as a “stop” for the etch process. Thisinvolves both selection of an appropriate wafer orientation and asuitable etchant. It must be noted here that the etch rate of silicon isorientation dependent. A preferred V-groove etching technique hasalready been described with respect to FIG. 2 h above and will not berepeated herein.

In one embodiment, the V-shaped groove, at region 309 h, etched parallelto the <1-1-0> direction has planar facets, which bind the V-shapedgroove, lying in the <1-1-1> plane. Further, it must be noted here thatany mask opening in a <1-0-0>-wafer will turn into a square etch pitwith four inclined <1-1-1>-walls or planes if etched long enough inwhich the <1-1-1>-planar facets are inclined at an angle of 54.7° withrespect to the <1-0-0> plane. In one embodiment, a if square maskopening is rotated 45° relative to the wafer 201 h flat, the<1-0-0>-planes, vertical to the surface, are revealed. In oneembodiment, anisotropic etching is preferably performed, which virtuallystops at the <1-1-1>-planes, thus a square mask opening etched longenough produces a pyramidal pit. If the square is stretched to a longthin line, the etch pit will turn into a long groove with a V-shapedcross-section. This so-called V-groove can be used for several purposes;such as but not limited to, positioning of optical fibers, providingchannels for distribution of fluids, etc. Dimensions of the groove arecontrolled by the corresponding V-groove mask windows, the accuracy oftheir alignment with the crystal axes, the erosion rate of the edges ofthe mask, and the relative etch rates of the crystal planes. Typically,the finished widths of V-grooves can be controlled to within 0.5 to 1μm. The scope and spirit of the invention is no way limited, and other3-D microstructures of varying shapes and dimensions including, but notlimited to, grooves, pyramidal pits, pyramidal cavities etc. may beetched into the wafer in accordance to the properties of the presentinvention. Such various other microstructures will be readily apparentto one of ordinary skill in the art having the benefit of thisdisclosure. The above specifications are not limiting with respect tothe 3-D microstructures and their accompanying dimensions as they can bechanged to suit any design, fabrication, and functional requirements.

In step 365, as shown in FIG. 3 i, the silicon nitride passivation 351layer formed on both the front side and back side of the wafer in step350, and shown in FIG. 3 f, is removed. Stripping of the passivationlayer is routine action of engineering and is readily known to those ofordinary skill in the art and will not be discussed in further detailherein.

As shown in FIG. 3 j, the back side of device wafer 301 j is subjectedto a second p+ lithography process in step 370. In one embodiment,regions 306 j, 307 j, 308 j and 309 j of the wafer 301 j, are definedusing p+ photolithography. It must be noted here that the second p+lithography process is analogous to the first p+ area lithographyprocess except that in this second p+ lithography process, the backsideof wafer 301 j is processed. Thus, details of the p+ lithographyprocessed will not be discussed herein as they have already beendescribed above.

In one embodiment or the p+ diffusion process, the dopant is boron. Inone embodiment, the V-groove etching and subsequent doping, either viadiffusion or ion implant, facilitates the development of a connectionbetween shallow p+ regions 307 j, 308 j, confined to back side of wafer301 j, and the shallow p+ region 306 j confined to front side of wafer301 j. The shallow p+ region 306 j created in step 345, is continuousand represents the p+ active area of each element of the photodiodearray. Shallow p+ active area layer is susceptible to short wavelengthlight, falling in the range of 380 to 600 nm, emitted from scintillatorcrystals. Electron hole pairs, photo-generated in the depletion layer,are immediately collected in the depletion region of this shallowjunction, resulting in high speed, high quantum efficiency of thefrontside-illuminated, backside contact photodiode array, even whenoperated in zero-bias photovoltage mode.

In step 375, as shown in FIG. 3 k, the oxide layer grown in step 320 isremoved from the front side of wafer 301 k. Removal of the oxide layeris well-known to those or ordinary skill in the art and will not bediscussed in further detail herein. In one embodiment, the front-side ofwafer 301 k is completely devoid of the oxide layer owing to oxidestripping.

Now referring to FIG. 31, an anti-reflective (AR) layer is grown on thefront-side and back-side of the device via thermal oxidation in step380. Various anti-reflective coating designs, such as 1 layer, 2 layer,3 layer, and 4+ layers may be employed. By way of example, and by nomeans limiting, the 1 layer anti-reflective coating design adoptedherein utilizes thin film materials, such as oxides, sulfides,fluorides, nitrides, selenides, metals, among others. In one embodimentof the present invention, the anti-reflective layer comprises SiO₂ (i.e.silicon dioxide antireflective). Preferably, the SiO₂ has a thickness of900 Å.

As shown in FIG. 3 m, in step 385, a contact etch mask is used to etchcontact windows onto the back side of the wafer. The contact window isformed on the back side of the treated substrate wafer by using standardsemiconductor technology photolithography techniques. The contact windowoxide can then be removed by either standard wet or standard dry etchingtechniques as are well known to those of ordinary skill in the art.

More specifically, and not limited to such example, in one embodiment ofthe photodiode array of the present invention, a contact window mask isfirst applied, followed by etching with a contact window oxide onselected regions of the back side of device wafer 301 m. Contactlithography, well-known to those of ordinary skill in the art, involvesprinting an image or pattern via illumination of a photomask in directcontact with a substrate coated with an imaging photoresist layer.

In one embodiment, a plurality of contact windows 311 m are formed onthe back side of the device wafer 301 m, using the contact window mask.Typically, a contact window is an aperture defined in a surfacepassivation layer through which device metallization develops contactwith circuit elements. In one embodiment, the contact window mask is adark field mask, which is used to remove the silicon oxide layer in bothn-type and p-type regions requiring contacts. While contact masks haveconventionally been fairly large (on the order of 100 mm or higher), itis possible that alignment tolerances may necessitate smaller mask sizesto allow stepping between exposures. As in nano-imprint lithography, themask needs to have roughly the same feature size as the desire image.

Using the contact mask, at least one or a plurality of contact windows311 m are opened through the protective oxide layer deposited on thesurface of device wafer 301 m. In one embodiment, contact window etchingis achieved via a chemical etching process, wherein the wafer isimmersed in a buffered oxide etch (BOE), a HF acid-based solution forintervals sufficient enough to remove the layers exposed by the contactwindow mask.

Referring now to FIG. 3 n, the device wafer 301 n is subjected to ametal deposition process 390 to etch metal on the back side of the waferfor creating electrical connections to n+ and p+ diffused regions. Inthe metal deposition process, also called metallization, metal layersare deposited on the wafer to create conductive pathways. The mostcommon metals include aluminum, nickel, chromium, gold, germanium,copper, silver, titanium, tungsten, platinum, and tantalum. Selectedmetal alloys may also be used. Metallization is often accomplished witha vacuum deposition technique. The most common deposition processesinclude filament evaporation, electron-beam evaporation, flashevaporation, induced evaporation, and sputtering, followed by metalmasking and etching. Metal etching can be performed in a variety ofmethods, including, but not limited to abrasive etching, dry etching,electroetching, laser etching, photo etching, reactive ion ethcing,sputter etching, and vapor phase etching. In one embodiment, metaldeposition lithography comprises initial performance of metal depositionfollowed by etching metal on front side of wafer 301 n facilitatingdevelopment of connection to regions 312 n.

The above examples are merely illustrative of the many applications ofthe system of present invention. Although only a few embodiments of thepresent invention have been described herein, it should be understoodthat the present invention might be embodied in many other specificforms without departing from the spirit or scope of the invention.Therefore, the present examples and embodiments are to be considered asillustrative and not restrictive, and the invention is not to be limitedto the details given herein, but may be modified within the scope of theappended claims.

1. A photodiode comprising: a substrate with at least a first side and asecond side; a first doped region of a first conductivity type locatedproximate to the second side; a second doped region of said firstconductivity type located proximate to the second side; a void in saidsubstrate, wherein said void separates the first doped region and thesecond doped region, wherein said void extends substantially from saidsecond side to said first side, wherein said void has sides, and whereinsaid sides are inclined and meet at a point proximate to the first side;a third doped region of said first conductivity type proximate to atleast one of sides; and at least one doped region of a secondconductivity type proximate to said first side.
 2. The photodiode ofclaim 1 further comprising at least one passivation layer on the firstside or the second side of the substrate.
 3. The photodiode of claim 1further comprising at least one anti-reflective layer on the first sideor the second side of the substrate.
 4. The photodiode of claim 1further comprising a plurality of contact electrodes in electricalcommunication with each of said doped regions.
 5. The photodiode ofclaim 1 comprising a fourth doped region of said first conductivity typeproximate to one of the sides of said void.
 6. The photodiode of claim 1comprising a doped region of a second conductivity type proximate tosaid second side.
 7. The photodiode of claim 1 wherein the impurity ofsaid first conductivity type is p-type.
 8. The photodiode of claim 1wherein the impurity of said second conductivity type is n-type.
 9. Aphotodiode comprising: a substrate with at least a front side and a backside; a first doped region of a first conductivity type locatedproximate to the back side; a second doped region of said firstconductivity type located proximate to the back side; a void in saidsubstrate, wherein said void separates the first doped region and thesecond doped region and wherein said void extends substantially fromsaid back side to said front side, wherein said void has sides; and athird doped region of said first conductivity type proximate to at leastone of sides.
 10. The photodiode of claim 9 further comprising at leastone doped region of a second conductivity type proximate to said frontside or back side.
 11. The photodiode of claim 9 further comprising atleast one passivation layer on the front side or the back side of thesubstrate.
 12. The photodiode of claim 9 further comprising at least oneanti-reflective layer on the front side or the back side of thesubstrate.
 13. The photodiode of claim 9 further comprising a pluralityof contact electrodes in electrical communication with each of saiddoped regions.
 14. The photodiode of claim 9 comprising a fourth dopedregion of said first conductivity type proximate to one of the sides ofsaid void.
 15. The photodiode of claim 9 wherein the void comprises twoinclined walls and a base, forming a V, and is doped with an impurity ofa first conductivity type for electrically connecting the front side ofthe substrate to the back side of the substrate.
 16. The photodiode ofclaim 11 wherein the first conductivity type is p-type.
 17. Thephotodiode of claim 11 wherein the second conductivity type is n-type.18. A method of manufacturing a semiconductor device comprising thesteps of: performing a mask oxidation on a front side and back side of adevice wafer; implementing n+ photolithography on the front and backsides; performing n+ diffusion followed by drive-in oxidation on thefront and back sides; implementing a first p+ area photolithography onthe front side; performing p+ diffusion followed by drive-in oxidationon the front side; growing a passivation layer on the front and backsides; implementing V-groove lithography on the back side; etching theV-groove on the back side; removing the passivation layer from the frontand back sides; implementing a second p+ area lithography on the backside; performing a p+ diffusion followed by drive-in oxidation on theback side; growing an anti-reflective (AR) layer on the front and backsides; implementing a contact window lithography on the front side; andperforming metal deposition followed by etching the metal on the frontside.